What are the differences of FMVSS 302, UL94 and IEC60695 for flammability test?

Abstract
Against the backdrop of the rapid development of the semiconductor industry, the problem of damage to semiconductor devices caused by electrostatic discharge (ESD) has become increasingly prominent. The Human Body Model (HBM) and Machine Model (MM) are the main sources of electrostatic threats faced by semiconductor devices during production, transportation, and use. This article focuses on the LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM), elaborating in detail on its design principles, compliance with international and domestic standards, equipment features, specifications, and applications in ESD susceptibility testing of semiconductor devices such as LED chips, transistors, and ICs. Through a comprehensive analysis of this equipment, this article demonstrates its important role in ensuring the quality and reliability of semiconductor devices, providing a reference for relevant testing work in the semiconductor industry.

Keywords
Electrostatic Discharge Simulator (HBM/MM) ESD-883D Semiconductor Devices ESD Susceptibility Testing Human Body Model (HBM) Machine Model (MM)

1. Introduction
As semiconductor technology continues to move towards miniaturization and high integration, the sensitivity of semiconductor devices to static electricity has increased significantly. Electrostatic discharge (ESD), as a common electromagnetic interference phenomenon, may cause semiconductor devices to suffer from performance degradation, functional failure, or even permanent damage, bringing huge economic losses to the semiconductor industry. According to relevant statistical data, ESD-induced failures account for more than 25% of the failure cases of semiconductor devices, making it a key factor affecting the reliability of semiconductor devices.
The Human Body Model (HBM) simulates the electrostatic discharge process that occurs when a charged human body comes into contact with semiconductor devices, while the Machine Model (MM) simulates the electrostatic discharge between production equipment, automated machinery, and other devices and semiconductor devices during operation. If the electrostatic energy generated by these two discharge models exceeds the tolerance limit of semiconductor devices, it will cause serious damage to the devices. Therefore, ESD susceptibility testing of semiconductor devices based on HBM and MM has become an indispensable step in the production, R&D, and quality inspection of semiconductor devices.
As a professional manufacturer of testing equipment, LISUN GROUP has developed and launched the ESD-883D Electrostatic Discharge Simulator (HBM/MM) in response to the characteristics and testing requirements of HBM and MM. This equipment can accurately simulate the electrostatic discharge processes of HBM and MM, and conduct ESD susceptibility testing on semiconductor devices in accordance with relevant international and domestic standards. It provides a reliable testing method for quality control of semiconductor devices and has been widely used in the semiconductor industry. 

2. Principles of HBM and MM Discharge Models and Significance of Testing
2.1 Principle of Human Body Model (HBM)
The Human Body Model (HBM) is established based on the physical process where a human body accumulates static electricity due to friction and other factors during daily activities, and the static electricity is discharged through the semiconductor device when the human body comes into contact with it. In the HBM model, the human body can be regarded as an equivalent circuit composed of a capacitor and a resistor. Generally, the equivalent capacitance of the HBM model is approximately 100pF, and the equivalent resistance is about 1500Ω. This parameter configuration can relatively accurately simulate the actual situation of electrostatic discharge when a charged human body comes into contact with a semiconductor device.
2.2 Principle of Machine Model (MM)
The Machine Model (MM) mainly simulates the electrostatic discharge process that occurs between automated equipment, robotic arms, conveyor belts, and other machinery on the production line and semiconductor devices after the machinery accumulates static electricity due to friction, induction, and other effects during operation. Compared with HBM, MM has a larger equivalent capacitance (usually 200pF) and a smaller equivalent resistance (close to 0Ω). This makes the current rise rate of the MM discharge process faster, the peak current larger, and the released electrostatic energy stronger, resulting in more significant damage to semiconductor devices.

Figure 1: Schematic Comparison of HBM and MM Discharge Model Principles

2.3 Significance of HBM and MM ESD Susceptibility Testing
Conducting HBM and MM ESD susceptibility testing on semiconductor devices is of great significance in multiple aspects. From the perspective of device R&D, testing can accurately help understand the tolerance of devices under different electrostatic discharge models, providing data support for device structure design, material selection, and process optimization, and contributing to the development of semiconductor devices with better electrostatic protection capabilities. In the production process, testing can screen the quality of produced semiconductor devices, eliminate products that do not meet requirements due to high electrostatic sensitivity, ensure the quality stability of delivered devices, and reduce the risk of device failure caused by static electricity for downstream enterprises. For downstream application enterprises, conducting ESD susceptibility testing on purchased semiconductor devices can verify whether the devices meet the usage requirements of their own products, ensure the reliability of end products during production and use, and avoid faults in end products caused by ESD failure of semiconductor devices.

3. Standards Complied with by LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM)
During the design and manufacturing process, the LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM) strictly adheres to a number of international and domestic standards, ensuring the accuracy, reliability, and universality of its testing results, and can meet the ESD susceptibility testing requirements of semiconductor devices in different countries, regions, and industries. The specific compliant standards are shown in the following table:

Discharge Model
International Standards
Chinese Standards

Human Body Discharge (HBM)

- MIL-STD-883 Method 3015 “Test Method Standard for Microcircuits – Electrostatic Discharge Susceptibility Testing”
- ANSI/ESD STM5.1-2007 “Standard Test Method for Electrostatic Discharge Sensitivity Testing – Human Body Model (HBM) – Component Level”
- ANSI/ESDA/JEDEC JS-001-2024 “Electrostatic Discharge (ESD) Sensitivity Testing – Human-Body Model (HBM) – Component Level”
- IEC 60749-26:2018 “Semiconductor devices – Mechanical and climatic test methods – Part 26: Electrostatic discharge (ESD) sensitivity testing – Human body model (HBM)”
- AEC-Q100-002 “Failure Mechanism Based Stress Test Qualification for Integrated Circuits – ESD HBM Test”
- EIA/JESD22-A114-A “Test Method for Electrostatic Discharge Sensitivity Testing – Human Body Model (HBM)”

GB/T 4937.26-2023 “Semiconductor Devices – Mechanical and Climatic Test Methods – Part 26: Electrostatic Discharge Susceptibility Test – Human Body Model” (equivalent to IEC 60749-26:2018)

Machine Discharge (MM)

- ANSI/ESD STM5.2-2013 “Standard Test Method for Electrostatic Discharge Sensitivity Testing – Machine Model (MM) – Component Level”
- IEC 60749-27:2012 “Semiconductor devices – Mechanical and climatic test methods – Part 27: Electrostatic discharge (ESD) sensitivity testing – Machine model (MM)”
- AEC-Q100-003 “Failure Mechanism Based Stress Test Qualification for Integrated Circuits – ESD MM Test”
- EIA/JESD22-A115-A “Test Method for Electrostatic Discharge Sensitivity Testing – Machine Model (MM)”

GB/T 4937.27-2023 “Semiconductor Devices – Mechanical and Climatic Test Methods – Part 27: Electrostatic Discharge Susceptibility Test – Machine Model” (equivalent to IEC 60749-27:2012)

Table 1: Standards Complied with by LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM)
The above standards specify in detail the test conditions, test procedures, parameter requirements, and result determination of HBM and MM electrostatic discharge testing. The LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM) not only fully meets the requirements of these standards but also can satisfy the most severe electrostatic voltage requirements in each standard, ensuring that it can provide accurate and effective ESD susceptibility testing for semiconductor devices in various harsh testing scenarios. For example, in the HBM testing standards, some standards require a maximum electrostatic voltage of 8kV, and the output voltage range of this equipment in HBM mode is 0.1~8kV±5%, which can accurately cover this strict voltage requirement; in the MM testing standards, the maximum electrostatic voltage requirement is 800V, and the output voltage range of the equipment in MM mode (100~800V±5%) also fully meets the testing needs.

4. Features of LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM)
The LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM) fully considers the practicality, stability, and safety of testing work in its design, and has many outstanding features, providing high-quality equipment support for ESD susceptibility testing of semiconductor devices.

User-Friendly Operation Interface
Equipped with a color touch LCD interface with a concise design and clear logic. Testers can master operation without complex training, and monitor real-time test parameters (discharge voltage, count, device status) via the screen.

High-Precision & Stable Output
Adopts advanced voltage control technology with ±5% output voltage accuracy in both HBM and MM modes. High-quality components and stable circuit design minimize interference from grid fluctuations and temperature changes.

Comprehensive Safety Protection
Equipped with an intelligent programmable high-voltage power supply, featuring over-voltage, over-current, and short-circuit protection. Automatically cuts off high-voltage output and alarms when abnormalities occur.

Intelligent Self-Diagnosis
Automatically detects key components (high-voltage power supply, control circuit, discharge loop) during startup and testing. Displays fault information on the LCD to facilitate timely maintenance.

High Cost-Effectiveness
Main components are imported high-quality parts with high precision, strong reliability, and long service life, reducing failure rates and maintenance costs. LISUN optimizes production processes to provide high-performance products at reasonable prices, meeting the needs of semiconductor enterprises of all sizes—from small R&D labs to large-scale production facilities.

5. Specifications of LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM)
Specifications are an important basis for understanding the performance and application scope of the equipment. The detailed specifications of the LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM) are shown in the following table:

Parameter Category
Specific Parameter
Human Body Discharge Mode (HBM)
Machine Discharge Mode (MM)

Output Voltage
Range
0.1~8kV
100~800V

Accuracy
±5%
±5%

Output Polarity
Positive, Negative, Alternating
Positive, Negative, Alternating

Trigger Mode
Single, Count, Host Self-Trigger
Single, Count, Host Self-Trigger

Discharge Interval
1~99s
1~99s

Number of Discharges
1~999 Times
1~999 Times

Discharge Capacitance
100pF±10%
200pF±10%

Discharge Resistance
1500Ω±10%
0Ω±10%

System Power Supply
AC 100~240V, 50/60Hz, 300W

Operating Environment
Temperature
15°C~35°C
15°C~35°C

Humidity
10%~75%
10%~75%

Table 2: Specifications of LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM)
It can be seen from the above specifications that the equipment has high flexibility in the setting of discharge parameters. It can adjust parameters such as output voltage, discharge polarity, number of discharges, and discharge interval according to the testing requirements of different semiconductor devices and different standards, meeting diversified testing scenarios. For example, when testing LED chips with different sensitivities, testers can select an appropriate output voltage in HBM mode according to the specifications of the chips (for chips with low sensitivity, a higher voltage can be selected for testing; for chips with high sensitivity, a lower voltage can be selected), and set the corresponding number of discharges and intervals to fully evaluate the ESD susceptibility performance of the chips.
It is worth noting that the LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM) also has good expandability. It can share a host with the ESD-CDM Charged Device Model (CDM) Semiconductor Electrostatic Discharge Simulator to form a comprehensive testing system (model: ESD-883D/ESD-CDM) that can test three discharge models (HBM, MM, and CDM) at the same time. This design not only saves the purchase cost of the equipment and the space occupied by the laboratory but also provides convenience for users to carry out CDM electrostatic susceptibility testing in the future, further improving the cost-effectiveness and use value of the equipment.
ESD-883D

6. Applications of LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM)
With its excellent performance and flexible configuration, the LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM) has been widely used in the ESD susceptibility testing of various semiconductor devices such as LED chips, transistors, and ICs, providing strong support for the quality control and reliability improvement of semiconductor devices.

6.1 Application in LED Chip Testing
As the core device in the fields of semiconductor lighting and display, the performance and reliability of LED chips directly affect the quality of end-products. During the production process of LED chips, from wafer manufacturing, chip cutting to packaging testing, they may face the threat of electrostatic discharge.
During the test, the LED chip is fixed on a special test fixture. According to the test standard and the specifications of the chip, an appropriate output voltage (such as 1kV, 2kV, 5kV, 8kV, etc.) and number of discharges are set in HBM mode, and then the equipment is started for discharge testing. After the test is completed, the photoelectric parameters of the LED chip (such as luminous intensity, luminous flux, forward voltage, reverse leakage current, etc.) are detected to judge the performance change of the chip under HBM electrostatic discharge. If there is no obvious change in the photoelectric parameters of the chip, it indicates that it can withstand the HBM electrostatic discharge of this voltage level; if the parameters are significantly degraded or the chip cannot emit light normally, it indicates that the HBM ESD susceptibility of the chip does not meet the requirements.

6.2 Application in Transistor Testing
As the basic switching and amplifying components in electronic circuits, transistors are widely used in computers, communication equipment, consumer electronics, and other fields. The structure of transistors is precise, and key parts such as PN junctions are extremely sensitive to electrostatic discharge. Once they are subjected to electrostatic shock, faults such as PN junction breakdown and base open circuit may occur, making the transistors lose their normal functions.
When using the LISUN ESD-883D to test transistors, appropriate test pins (such as base, emitter, collector) should be selected for discharge according to the type of transistor (such as NPN type, PNP type, MOSFET, etc.) and the test standard. For example, when testing an NPN-type transistor in HBM mode, the discharge electrode is usually connected to the base of the transistor, the emitter and collector are grounded, and then the corresponding output voltage and number of discharges are set for testing. After the test is completed, a transistor characteristic tester is used to detect the parameters of the transistor, such as current gain (β), reverse breakdown voltage (BVCEO, BVCBO, etc.), and leakage current (ICBO, IEBO, etc.), to evaluate the performance of the transistor after electrostatic discharge.

6.3 Application in IC Testing
Integrated circuits (ICs) are the core products of the semiconductor industry, with the characteristics of high integration, complex functions, and precise internal structure. They contain a large number of components such as transistors, resistors, and capacitors. If any component is damaged by electrostatic discharge, the entire IC chip may fail to function.
The LISUN ESD-883D can conduct HBM and MM ESD susceptibility testing on various IC chips (such as microprocessors, memories, sensors, power management ICs, etc.) in accordance with standards such as AEC-Q100-002, AEC-Q100-003, and MIL-STD-883 Method 3015. Before the test, a detailed test plan needs to be formulated according to the pin definition of the IC chip and the test standard, and the pins (such as power pins, signal pins, ground pins, etc.) that need to be subjected to discharge testing and the corresponding discharge voltage levels are determined. After the test, an IC test system is used to conduct a comprehensive test on various functions of the IC chip, such as logic function test, timing test, and electrical parameter test, to judge whether the IC chip can work normally after electrostatic discharge.

7. Conclusions and Prospects
7.1 Conclusions
As a testing equipment specially designed for the Human Body Model (HBM) and Machine Model (MM), the LISUN ESD-883D Electrostatic Discharge Simulator (HBM/MM) has shown excellent performance in the field of ESD susceptibility testing of semiconductor devices. This equipment strictly adheres to a number of international and domestic standards, can meet the most severe electrostatic voltage requirements in different standards, and provides a guarantee for the accuracy and universality of test results. Its user-friendly operation interface, high-precision and stable output performance, comprehensive safety protection mechanism, intelligent self-diagnosis function, and high cost-effectiveness make it an ideal choice for semiconductor enterprises, R&D institutions, and testing laboratories to carry out ESD susceptibility testing. https://www.lisungroup.com/news/technology-news/electrostatic-discharge-simulator-hbm-mm-a-core-equipment-for-esd-susceptibility-testing-of-semiconductor-devices.html